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Kada, Wataru; Grilj, V.*; Skukan, N.*; Sato, Takahiro; Makino, Takahiro; Onoda, Shinobu; Koka, Masashi; Oshima, Takeshi; Jaki, M.*; Kamiya, Tomihiro
no journal, ,
Transmission particle detectors using thin-film diamond which could have role of beam-extraction window of the heavy ion microbeam line of AVF Cyclotron placed at TARRI, JAEA. The in-situ observation technique using this kind of detectors was newly developed for the individual detection of single-hit of these heavy ions with energy of several MeV used for the research of single ion hit(event) in the living bio-cell or semiconductor devices. In this study, two types of the detectors using spectroscopic-detector-grade poly- and single-crystalline diamond films with thickness of upper 50 m were examined, respectively. In the experiments, the detectors were irradiated by MeV energy alpha-particles from radioisotope sources and also by heavy ion microbeams at TARRI of JAEA and RBI. It was examined that the thin-film single-crystalline diamond detector respond to particle irradiation with energy of several MeV better, in respect of the energy resolution and the detection efficiency.
Motohashi, Kenji*; Saito, Yuichi; Miyawaki, Nobumasa
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no abstracts in English
Saegusa, Jun
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Due to the NPP accident on March 11th, not a few outdoor pools in Fukushima prefecture suspended water discharge, out of concerns that the radiocesium in water inflow into a river or waterways for agricultural use. The Japan Atomic Energy Agency has reviewed the existing absorbent method and the flocculation method as ways for decontaminating pool water, and by demonstrating its process at pools in Fukushima prefecture, established a practical decontamination method.
Tagawa, Masahito*; Yokota, Kumiko*; Yoshigoe, Akitaka; Teraoka, Yuden
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no abstracts in English
Nishikino, Masaharu; Hasegawa, Noboru; Tomita, Takuro*; Minami, Yasuo*; Takei, Ryota*; Ishino, Masahiko; Yamamoto, Minoru*; Terakawa, Kota*; Kaihori, Takeshi; Kawachi, Tetsuya; et al.
no journal, ,
In order to understand the dynamics of the femtosecond laser ablation process, we performed a pump and probe reflectivity imaging of the platinum surface during the femtosecond laser ablation by using the laser-driven soft X-ray laser as a probe beam. The fluence dependence of the soft X-ray reflectivity is classified into three regions: (1) strongly excited, (2) moderately excited, and (3) weakly excited regions. In strongly excited region, the rapid reduction of the reflectivity due to the explosive evaporation in the ablation process of the material surface was observed. In the moderately excited region, the reflectivity reduction is far slower than that in the strongly excited region. The reflectivity reduction is seemed to be caused by the growth of surface roughness on the ablation front because of the formation of nano-bubbles in the irradiated material.
Ishii, Yasuyuki; Okubo, Takeru; Miyake, Yoshinobu*; Kamiya, Tomihiro
no journal, ,
no abstracts in English
Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Yoshigoe, Akitaka; Komeda, Tadahiro*
no journal, ,
no abstracts in English
Oba, Hironori; Saeki, Morihisa; Wakaida, Ikuo
no journal, ,
no abstracts in English
Itagaki, Wataru
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no abstracts in English
Yamada, Yoichi*; Sinsarp, A.*; Yokoyama, Yuta; Asaoka, Hidehito; Sasaki, Masahiro*
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no abstracts in English
Deki, Manato; Makino, Takahiro; Tomita, Takuro*; Oshima, Takeshi; Kojima, Kazutoshi*
no journal, ,
no abstracts in English
Yoshihara, Kazuki*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi
no journal, ,
no abstracts in English
Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Yamada, Yoichi*; Sasaki, Masahiro*
no journal, ,
Ge has been attracting considerable attention as one of the promising materials for next-generation MOSFET devises because of its high carrier mobility. Understanding of O adsorption process on Ge substrate with various index planes is the most essential to control the quality of oxide layers for these devices. In this research, we employ SR-XPS (synchrotron radiation X-ray photoelectron spectroscopy) measurement to study the oxidation mechanism of the Ge(111) which is known as one of the low index planes. We found the difference in Ge3d profiles of the Ge oxide formed by between supersonic O molecular beam and back filling O. The difference shows that the kinetic energy of the supersonic O molecular beam caused higher coordination of Ge oxide than that of back filling O. This result suggests the presence of new O adsorption states activated by the supersonic O molecular beam.
Abe, Hiroshi; Muraki, Keita*; Kishimoto, Masahiko*; Uchida, Hirohisa*; Oshima, Takeshi
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no abstracts in English
Otobe, Tomohito
no journal, ,
We simulate the HHG from a diamond under intense laser field solving the time-dependent Kohn-Sham equation with real-time and -space method. Our result shows that the HHG above the band gap has broad spectra and the frequency of HHG are blue shifted after the optical breakdown occurs.
Kitamura, Akane; Sato, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Kobayashi, Tomohiro*
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no abstracts in English
Yoshigoe, Akitaka; Teraoka, Yuden; Okada, Ryuta; Yamada, Yoichi*; Sasaki, Masahiro*
no journal, ,
Ge has been attracting considerable attention as one of the promising materials for next-generation MOSFET devises because of its high carrier mobility. In the application of Ge, it is important to fabricate well-defined thin oxide layer on the surfaces. Understanding of adsorption process of oxygen molecules on surfaces of Ge is the essential step toward the establishment of the controlled oxide layer. In this research, we studied the oxidation mechanism of the Ge(100) using in-situ SR-XPS (synchrotron radiation X-ray photoelectron spectroscopy). In the oxidation of Ge(100) at room temperature, it was found that the population of the higher oxidation state of Ge became larger with increasing the translational energy of the impinging oxygen beam. This is very essential information that will be important in controlling the oxide layer on Ge substrate.
Sasase, Masato*; Okayasu, Satoru; Yamamoto, Hiroyuki
no journal, ,
Nanostructural changes of iron disilicide (-FeSi) thin films has been performed by high energy heavy ion irradiation.
Onoda, Shinobu; Abe, Hiroshi; Yamamoto, Takashi; Oshima, Takeshi; Isoya, Junichi*; Teraji, Tokuyuki*; Watanabe, Kenji*
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no abstracts in English
Ito, Takuto*; Onishi, Ryo*; Deki, Manato; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi
no journal, ,
no abstracts in English